Mei-Ju Kuo

Title: Mei-Ju Kuo: Innovator in Semiconductor Technology

Introduction

Mei-Ju Kuo is a prominent inventor based in Hsinchu, Taiwan. He has made significant contributions to the field of semiconductor technology, particularly in the area of etch profile control for isolation trenches. With a total of 2 patents, Kuo's work has had a substantial impact on the industry.

Latest Patents

Kuo's latest patents focus on a device that includes a substrate, a first fin, a second fin, a first isolation structure, a second isolation structure, and a gate structure. The first fin extends from a p-type region of the substrate, while the second fin extends from an n-type region. The first isolation structure is positioned over the p-type region and adjacent to the first fin, featuring a bottom surface and opposite first and second sidewalls. A first round corner is located between the bottom surface and the first sidewall of the first isolation structure, with the first sidewall being substantially parallel to the second sidewall. The second isolation structure is situated over the n-type region and adjacent to the first fin, with the first isolation structure being deeper than the second. The gate structure is positioned over the first isolation structure, covering the first fin.

Career Highlights

Mei-Ju Kuo is currently employed at Taiwan Semiconductor Manufacturing Company Ltd., where he continues to innovate and develop new technologies. His expertise in semiconductor fabrication processes has made him a valuable asset to the company.

Collaborations

Kuo has collaborated with notable colleagues such as Hsien-Chung Huang and Chiung-Wen Hsu, contributing to various projects that enhance semiconductor technology.

Conclusion

Mei-Ju Kuo's contributions to semiconductor technology through his patents and collaborations highlight his role as an influential inventor in the industry. His work continues to shape advancements in the field, demonstrating the importance of innovation in technology.