Mehran Moalem

Title: Innovations of Mehran Moalem in Silicon Carbide Technology

Introduction

Mehran Moalem is a notable inventor based in Berkeley, CA (US). He has made significant contributions to the field of materials science, particularly in the development of silicon carbide films and microcomponents. His innovative work has led to advancements in semiconductor technology.

Latest Patents

Mehran Moalem holds a patent for a process for forming silicon carbide films and microcomponents. This patent describes a method where silicon carbide films and microcomponents are grown on silicon substrates at surface temperatures ranging from 900 K to 1700 K using C.sub.60 precursors in a hydrogen-free environment. The process allows for selective crystalline silicon carbide growth on patterned silicon-silicon oxide samples. The patterned SiC films are produced by leveraging the high reaction probability of C.sub.60 with silicon at elevated temperatures, while maintaining a negligible reaction probability for C.sub.60 on silicon dioxide at lower temperatures.

Career Highlights

Mehran Moalem is affiliated with the University of California, where he continues to engage in research and development in the field of semiconductor materials. His work has been instrumental in enhancing the understanding and application of silicon carbide in various technological domains.

Collaborations

Throughout his career, Mehran has collaborated with esteemed colleagues such as Alex V Hamza and Mehdi Balooch. These collaborations have further enriched his research and contributed to the advancement of silicon carbide technologies.

Conclusion

Mehran Moalem's innovative contributions to silicon carbide technology exemplify the impact of research and development in materials science. His patent and ongoing work at the University of California continue to pave the way for future advancements in the field.