Pittsburgh, PA, United States of America

Mehmet N Gungor

This inventor holds 2 USPTO granted patents and 3 published patent applications. Top assignees: Eaton Corporation, Northrop Grumman Systems Corporation. Active years: 1997-1999.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Mehmet N Gungor. Retrieved from https://idiyas.com/inventor/mehmet-n-gungor

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank
USPTO Granted Patents = 2 

% Patents Active = 100.0

Average Co-Inventor Count = 3.0

ph-index = 1

Forward Citations = 28(Granted Patents)


Company Filing History:


Years Active: 1997-1999

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2 patents (USPTO):Explore Patents

Title: Innovations by Mehmet N Gungor

Introduction

Mehmet N Gungor is a notable inventor based in Pittsburgh, PA (US). He has made significant contributions to the field of high power electronic devices, holding a total of 2 patents. His work focuses on enhancing the performance and reliability of electronic components through innovative materials and designs.

Latest Patents

One of Gungor's latest patents is for a composite substrate carrier designed for high power electronic devices. This substrate carrier supports one or more high power semiconductor devices and is fabricated from a metal base composite. It includes strategically located high conductivity copper-based inserts that provide an effective heat transfer path to a heat sink. The coefficient of thermal expansion of both the metal-based composite and the copper-based inserts is designed to match that of the substrate, ensuring optimal performance. The substrate carrier is formed through a pressure casting process, where a porous preform of silicon carbide is infiltrated with molten aluminum.

Another significant patent involves the creation of a porosity-free electrical contact material. This innovation results in a 100% dense, porosity-free copper-chromium contact, eliminating deleterious porosity. The contact is produced by pressurizing liquid copper to infiltrate an evacuated chromium-based, lightly sintered, highly porous preform. The resulting electrical contact features either a homogeneous or graded chromium distribution, enhancing its performance and durability.

Career Highlights

Throughout his career, Gungor has worked with prominent companies such as Northrop Grumman Systems Corporation and Eaton Corporation. His experience in these organizations has contributed to his expertise in developing advanced electronic materials and components.

Collaborations

Gungor has collaborated with notable professionals in his field, including J Donald Gardner, Jr and William R Larimer. These collaborations have further enriched his work and innovations in electronic device technology.

Conclusion

Mehmet N Gungor's contributions to the field of high power electronic devices through his innovative patents and collaborations highlight his significant role as an inventor. His work continues to influence advancements in electronic materials and designs.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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