This inventor holds 1 USPTO granted patent. Top assignee: Atmel Corporation. Active years: 1996.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile
Company Filing History:
Years Active: 1996
Title: The Innovations of Mehdi Jazayeri
Introduction
Mehdi Jazayeri is a notable inventor based in Cupertino, CA (US). He has made significant contributions to the field of non-volatile memory technology. His innovative work has led to the development of a unique patent that enhances memory performance.
Latest Patents
One of Mehdi Jazayeri's key patents is focused on high-speed, low-voltage non-volatile memory. This invention describes a low voltage EPROM that increases reading speed by charging a word line to a voltage higher than Vcc during read operations. The design incorporates two voltage pumps that alternately place charge on a word line, controlled by signals from a temperature-insensitive oscillator. Additionally, the voltage from these pumps passes through a zero threshold voltage n-type pass device to the word line. To ensure compatibility with standard 5V programmers, each output driving circuit consists of a large output driver for low voltage conditions and a smaller output driver for standard 5V conditions. This innovative approach significantly enhances memory performance while maintaining compatibility.
Career Highlights
Mehdi Jazayeri is currently associated with Atmel Corporation, where he continues to work on advancements in memory technology. His expertise and innovative mindset have positioned him as a valuable asset in the field.
Collaborations
Throughout his career, Mehdi has collaborated with notable colleagues such as George J Korsh and Edward S Hui. These collaborations have contributed to the development of cutting-edge technologies in the industry.
Conclusion
Mehdi Jazayeri's contributions to the field of non-volatile memory technology exemplify his innovative spirit and dedication to advancing technology. His patent on high-speed, low-voltage memory showcases his ability to solve complex challenges in the industry.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile
