Hirakata, Japan

Mayumi Inoue


Average Co-Inventor Count = 4.1

ph-index = 2

Forward Citations = 50(Granted Patents)


Location History:

  • Moriguchi, JP (1992)
  • Hirakata, JP (2003 - 2004)

Company Filing History:


Years Active: 1992-2004

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3 patents (USPTO):Explore Patents

Title: Innovations by Mayumi Inoue in Thin-Film Transistor Technology

Introduction

Mayumi Inoue, an accomplished inventor based in Hirakata, Japan, has made significant contributions to the field of electronic displays, particularly through her work on thin-film transistors (TFTs). With a total of three patents to her name, Inoue's innovations enhance the functionality and efficiency of liquid crystal display units, vital for modern electronics.

Latest Patents

Inoue's primary patent focuses on a specific type of low-temperature polysilicon thin-film transistor. Her invention details a top gate type LDD (Lightly Doped Drain) TFT, which has been engineered to exhibit exceptional properties. The innovative design features a two-stage gate electrode structure, achieved through a specialized chemical reaction or plating technique. This design allows for controlled impurity injections, utilizing the gate electrode's unique shape as a mask. Additionally, she incorporates methods to remove the gate insulating film prior to impurity injection and introduces a titanium (Ti) film to mitigate hydrogen diffusion. Such advancements position her invention as a notable improvement in the reliability and quality of TFTs used in display technology.

Career Highlights

Throughout her career at Matsushita Electric Industrial Co., Ltd., Mayumi Inoue has established herself as a pioneering inventor in her field. Her work not only emphasizes technical innovation but also reflects a deep understanding of material science and engineering principles. Inoue’s patents are pivotal for advancements in liquid crystal display technologies, further solidifying her reputation as a key player in electronic innovations.

Collaborations

Inoe's journey is complemented by fruitful collaborations with notable colleagues, including Shin-itsu Takehashi and Shigeo Ikuta. Their shared expertise and combined efforts have undoubtedly contributed to the successful development and implementation of their technological advancements in thin-film transistors.

Conclusion

Mayumi Inoue's work exemplifies the spirit of innovation in the electronic display sector. With her groundbreaking patents and collaborative efforts, she has significantly influenced the design and production of thin-film transistors, reinforcing their critical role in advancing display technologies globally. Her ongoing contributions continue to inspire future developments in the field of electronics.

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