Matsushita Electric Industrial Co., Ltd.

Mayumi Inoue

Shigeo Ikuta

Tetsuo Kawakita

Keizaburo Kuramasu

Shin-itsu Takehashi

Kohji Matsunaga

Tomizoh Matsuoka

The present invention provide an LDD type TFT having excellent properties, particularly for a liquid crystal display unit. For this purpose, a top gate type LDDTFT gate electrode is converted into a two-stage structure by use of a chemical reaction or plating, and furthermore, into a shape in which an upper portion or a lower portion slightly protrudes on the source electrode side, or the drain electrode side relative to the other portions. Impurities are injected by using this electrode having this structure and shape as a mask. Prior to injection of impurities, the gate insulating film is removed, and a Ti film is formed for preventing hydrogen for dilution from coming in. This is also the case with the LDD-TFT on the bottom gate side.

Thin-film transistor, panel, and methods for producing them

A fabrication method for thin film electroluminescent panels including steps of forming a composite film by depositing Ni film on Al film for forming back electrodes and lead-out electrodes, forming a resist pattern on the composite film and etching the composite film into a predetermined pattern so as to form back electrodes and lead-out electrodes using an etchant containing phosphoric acid of 3.5 to 13.0 mol/l, sulphuric acid of 0.1 to 9.0 mol/l, nitric acid of 0.1 to 8.0 mol/l and acetic acid of 0.0 to 8.0 mol/l.

Fabrication method for thin film electroluminescent panels

Growing community of inventors

Hirakata, Japan

Mayumi Inoue