May-Lin Lee

Title: May-Lin Lee: Innovator in Memory Technology

Introduction

May-Lin Lee is a prominent inventor based in Cupertino, CA, known for his contributions to memory technology. He holds 2 patents that showcase his innovative approach to enhancing data storage and access in electronic devices.

Latest Patents

One of his latest patents is for a random access memory device with block reset. This invention provides an apparatus for storing data that receives reset control signals. It includes a plurality of storage blocks, each containing an array of memory units for storing data. The design allows for resetting along storage block boundaries, improving efficiency in data management.

Another significant patent is the on-chip pulse-width control circuit for SRAM memories. This circuit features several banks of capacitors, with each bank containing identical capacitors. A single fuse controls the connection of these capacitors to a pulse-width-determining node on the address-transition-detect pulse generators of the SRAM device. This innovative design allows for simultaneous adjustment of pulse-width across all ATD pulse generators by blowing a single fuse.

Career Highlights

May-Lin Lee is currently employed at Advanced Micro Devices Corporation, where he continues to develop cutting-edge memory technologies. His work has significantly impacted the efficiency and performance of SRAM devices.

Collaborations

He has collaborated with notable coworkers such as Jiunn-Yau Liou and Moon S Kok, contributing to advancements in memory technology.

Conclusion

May-Lin Lee's innovative patents and contributions to memory technology highlight his role as a key inventor in the field. His work continues to influence the development of efficient data storage solutions.