Location History:
- Daly City, CA (US) (1995)
- San Leandro, CA (US) (1996 - 2002)
Company Filing History:
4 out of 4,791 
2 out of 1,302 
Years Active: 1995-2002
Title: Max C Kuo: Innovator in Non-Volatile Memory Technology
Introduction
Max C Kuo is a prominent inventor based in San Leandro, CA (US). He has made significant contributions to the field of non-volatile memory technology, holding a total of 6 patents. His innovative approaches have paved the way for advancements in memory cell design and functionality.
Latest Patents
Among his latest patents, Kuo has developed a process for making a non-volatile memory cell with a polysilicon spacer defined select gate. This method involves forming a floating gate over a silicon body region, which is insulated from the underlying portion. Additionally, he has created a method for reducing the capacitance across the layer of tunnel oxide in electrically-erasable programmable read-only-memory (EEPROM) cells. This technique enhances the performance of memory cells by optimizing the thickness of the tunnel oxide layer.
Career Highlights
Throughout his career, Max C Kuo has worked with notable companies such as National Semiconductor Corporation and Fairchild Semiconductor Corporation. His experience in these organizations has contributed to his expertise in semiconductor technology and memory systems.
Collaborations
Kuo has collaborated with esteemed colleagues, including James M Jaffe and Sik-Han Soh. These partnerships have fostered a collaborative environment that encourages innovation and the sharing of ideas.
Conclusion
Max C Kuo's contributions to non-volatile memory technology and his impressive portfolio of patents highlight his role as a leading inventor in the field. His work continues to influence advancements in memory cell design and functionality.