Best, Netherlands

Maurits M N Storms

This inventor holds 1 USPTO granted patent and 1 published patent application. Top assignee: Nxp B.v.. Active years: 2010.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Maurits M N Storms. Retrieved from https://idiyas.com/inventor/maurits-m-n-storms

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank
USPTO Granted Patents = 1 

% Patents Active = 100.0

Average Co-Inventor Count = 2.0

ph-index = 1

Forward Citations = 6(Granted Patents)


Company Filing History:


Years Active: 2010

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1 patent (USPTO):Explore Patents

Title: Maurits M. N. Storms: Inventor of a High-Voltage Driver Circuit

Introduction

Maurits M. N. Storms is an inventor associated with Best, Netherlands, and NXP B.V. His patent work includes a circuit design for operating devices such as non-volatile memories at both high and low voltages.

Latest Patents

Storms is credited with 1 patent: “High Voltage Driver Circuit with Fast Slow Voltage Operation.” The invention combines low- and high-voltage drivers to support different operating modes. In one configuration, a low-voltage driver is connected in parallel with a high-voltage driver, providing separate signal paths for low- and high-voltage operations. In another configuration, the low-voltage driver connects to the output of a high-voltage driver, which may include a partial level shifter. The design uses a pull-up or pull-down transistor, depending on the level-shifting arrangement.

Career Highlights

Storms’s listed patent reflects work on voltage-driver circuitry for electronic devices, including non-volatile memories. The design addresses how a circuit can support both high-voltage and low-voltage operations.

Collaborations

Storms is associated with NXP B.V. and is listed alongside coworker Bobby Jacob Daniel.

Conclusion

Maurits M. N. Storms’s patent describes a flexible driver circuit that combines high- and low-voltage operation for electronic devices.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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