Company Filing History:
Years Active: 1995-1998
Title: Innovations of Matthias Passlack
Introduction
Matthias Passlack is a notable inventor based in New Providence, NJ (US). He has made significant contributions to the field of semiconductor technology, holding three patents that showcase his innovative approach to electronic and optoelectronic devices.
Latest Patents
His latest patents include an article comprising a gallium layer on a GaAs-based semiconductor. This invention details a method for forming a high-quality interface between a GaAs-based semiconductor and a Ga.sub.2 O.sub.3 dielectric. The process involves preparing the surface of a GaAs wafer under ultra-high vacuum (UHV) conditions, followed by careful transfer and growth of the dielectric to ensure minimal impurity coverage. The resulting semiconductor/Ga.sub.2 O.sub.3 structures exhibit low interface state density and interface recombination velocity, making them suitable for various applications, including GaAs-based MOS-FETs, HBTs, and lasers on solar cells. Another patent focuses on gallium oxide coatings for optoelectronic devices, emphasizing the importance of thin film coatings that provide low midgap interface state density.
Career Highlights
Throughout his career, Matthias has worked with prominent companies such as Lucent Technologies Inc. and AT&T Corp. His experience in these organizations has contributed to his expertise in semiconductor technology and innovation.
Collaborations
Matthias has collaborated with notable individuals in the field, including George J. Zydzik and Neil E. Hunt. These collaborations have likely enriched his work and led to advancements in semiconductor research.
Conclusion
Matthias Passlack's contributions to semiconductor technology through his patents and collaborations highlight his role as an influential inventor in the field. His work continues to impact the development of advanced electronic and optoelectronic devices.