The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 27, 1996
Filed:
Mar. 23, 1994
Niloy K Dutta, Colonia, NJ (US);
Russell J Fischer, Berkeley Heights, NJ (US);
Neil E Hunt, Scotch Plains, NJ (US);
Matthias Passlack, New Providence, NJ (US);
Erdmann F Schubert, New Providence, NJ (US);
George J Zydzik, Columbia, NJ (US);
Lucent Technologies Inc., Murray Hill, NJ (US);
Abstract
An optoelectronic lII-V or II-VI semiconductor device comprises a thin film coating with optical characteristics providing low midgap interface state density. A field effect device for inversion channel applications on III-V semiconductors also comprises a thin dielectric film providing required interface characteristics. The thin film is also applicable to passivation of states on exposed surfaces of electronic III-V devices. The thin film comprises a uniform, homogeneous, dense, stoichiometric gallium oxide (Ga.sub.2 O.sub.3) dielectric thin film, fabricated by electron-beam evaporation of a single crystal, high purity Gd.sub.3 Ga.sub.5 O.sub.12 complex compound on semiconductor substrates kept at temperatures ranging from 40.degree. to 370.degree. C. and at background pressures at or above 1.times.10.sup.-10 Torr.