Seoul, South Korea

Matthias Herrmann

This inventor holds 1 USPTO granted patent. Top assignee: Lg Electronics Inc.. Active years: 2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Matthias Herrmann. Retrieved from https://idiyas.com/inventor/matthias-herrmann-vgx1d82g

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


Average Co-Inventor Count = 1.0

ph-index = 1


Company Filing History:


Years Active: 2026

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1 patent (USPTO):Explore Patents

Title: Matthias Herrmann and Laundry-Treating Innovation.

Introduction

Matthias Herrmann is an inventor associated with LG Electronics Inc. in Seoul, South Korea. His listed patent work concerns a laundry-treating apparatus designed to circulate and condition air while removing foreign matter from its heat exchanger.

Latest Patents

Herrmann is credited with 1 patent: “Laundry Treating Apparatus.” The invention describes a cabinet containing a drum and a circulation passage that returns air discharged from the drum. A fan moves the air through the passage, while an evaporator cools it and a spaced-apart condenser heats it. A removal device applies mechanical force to separate foreign matter from the heat exchanger, which includes the condenser and evaporator.

Career Highlights

The available information identifies Herrmann’s work with LG Electronics Inc. and highlights his contribution to laundry-appliance technology. The patent focuses on air circulation, temperature control, and heat-exchanger cleaning within a laundry-treating apparatus.

Collaborations

Juhan Yoon and Myoungjong Kim are listed as Herrmann’s coworkers. Their names are associated with his professional context, though the supplied information does not specify their roles in the patent.

Conclusion

Matthias Herrmann’s listed patent reflects an engineering approach to improving laundry appliances through controlled air circulation and mechanical removal of foreign matter from a heat exchanger.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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