North Lancaster, Canada

Matthew Christopher Innes

USPTO Granted Patents = 5 

 


Average Co-Inventor Count = 2.7

ph-index = 2

Forward Citations = 7(Granted Patents)


Company Filing History:


Years Active: 2011-2020

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5 patents (USPTO):Explore Patents

Title: Matthew Christopher Innes: Innovator in Negative Poisson's Ratio Structures

Introduction

Matthew Christopher Innes is an accomplished inventor based in North Lancaster, CA. He holds a total of 5 patents that showcase his innovative contributions to the field of materials science, particularly in the development of structures with unique mechanical properties.

Latest Patents

Among his latest patents are the "Zero-porosity NPR structure and tuning of NPR structure for particular localities" and "Negative Poisson's ratio waffle structures." The first patent introduces a zero-porosity structure featuring multiple structural elements designed to achieve a negative Poisson's ratio. This innovative mechanism utilizes a single material to create a zero-porosity structure. The second patent describes an auxetic structure that includes a first sheet with a plurality of structural elements projecting from it, arranged to provide a negative Poisson's ratio. Additionally, it outlines the potential for multi-layered structures that exhibit auxetic properties.

Career Highlights

Matthew has worked with prestigious organizations such as Rolls-Royce Corporation and Harvard College. His experience in these institutions has allowed him to refine his expertise and contribute significantly to advancements in material science.

Collaborations

Throughout his career, Matthew has collaborated with notable professionals, including Katia Bertoldi and Farhad Javid. These partnerships have further enriched his research and development efforts.

Conclusion

Matthew Christopher Innes is a prominent figure in the field of innovative materials, particularly known for his work on negative Poisson's ratio structures. His patents and collaborations reflect his commitment to advancing technology in this area.

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