Austin, TX, United States of America

Matt M Hamrah

This inventor holds 1 USPTO granted patent. Top assignee: Applied Materials, Inc.. Active years: 1993.


% Patents Active = 100.0

Average Co-Inventor Count = 3.0

ph-index = 1

Forward Citations = 27(Granted Patents)


Company Filing History:


Years Active: 1993

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1 patent (USPTO):Explore Patents

Title: The Innovative Contributions of Matt M. Hamrah

Introduction

Matt M. Hamrah is a notable inventor based in Austin, TX, who has made significant contributions to the field of semiconductor manufacturing. His innovative work focuses on enhancing etching processes, which are crucial in the production of microelectronic devices. With a patent to his name, Hamrah has demonstrated his expertise and commitment to advancing technology.

Latest Patents

Hamrah's most recent patent is titled "Reactive ion etch process including hydrogen radicals." This invention introduces a gaseous source of hydrogen radicals, such as hydrogen, ammonia, or methane, into oxide reactive ion etching (RIE) chemistries. By incorporating these gases in amounts ranging from about 5 to about 20 percent by volume of the total gas flow, the oxide etch rate is significantly increased while the polysilicon etch rate is suppressed. This innovative process achieves an oxide etch rate exceeding 5000 Å/min, with selectivity to polysilicon greater than 25:1 and selectivity to photoresist greater than 6:1. Notably, this method maintains a favorable profile angle, RIE lag, and etch rate uniformity, showcasing its effectiveness in semiconductor fabrication.

Career Highlights

Matt M. Hamrah is currently employed at Applied Materials, Inc., a leading company in the semiconductor equipment industry. His work at Applied Materials has allowed him to contribute to cutting-edge technologies that enhance manufacturing processes. His dedication to innovation is evident in his patent and the impact it has on the industry.

Collaborations

Throughout his career, Hamrah has collaborated with esteemed colleagues, including Ian J. Morey and Graham W. Hills. These partnerships have fostered a collaborative environment that encourages the exchange of ideas and advancements in technology.

Conclusion

Matt M. Hamrah's contributions to the field of semiconductor manufacturing through his innovative patent demonstrate his expertise and commitment to advancing technology. His work continues to influence the industry, paving the way for future innovations.

Profile summary based on public USPTO records.
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