Stenungsund, Sweden

Mats Andersson



Average Co-Inventor Count = 4.0

ph-index = 2

Forward Citations = 16(Granted Patents)


Company Filing History:


Years Active: 1998-1999

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2 patents (USPTO):Explore Patents

Title: Innovations of Mats Andersson in Semiconductor Technology

Introduction

Mats Andersson is a notable inventor based in Stenungsund, Sweden. He has made significant contributions to the field of semiconductor technology, particularly with his innovative designs and methods. With a total of 2 patents, his work has garnered attention in the industry.

Latest Patents

Mats Andersson's latest patents include a field controlled semiconductor device of silicon carbide (SiC) and a method for its production. This device features a drain, a highly doped substrate layer, and a low doped n-type drift layer. Additionally, it incorporates a highly doped n-type source region layer and a source connected to it. The design allows for a current to flow through a doped channel region layer when the device is in an on-state. The gate electrode is strategically arranged to influence the channel region layer, creating a conducting channel with a lateral extension.

Career Highlights

Throughout his career, Mats has worked with prominent companies such as ABB Research Ltd. and Cree GmbH. His experience in these organizations has contributed to his expertise in semiconductor technology and innovation.

Collaborations

Mats has collaborated with notable professionals in the field, including Christopher Ian Harris and Mietek Bakowski. These partnerships have further enhanced his work and contributions to the industry.

Conclusion

Mats Andersson's innovative work in semiconductor technology, particularly with his recent patents, showcases his expertise and commitment to advancing the field. His collaborations and career highlights reflect his significant impact on the industry.

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