Tokyo, Japan

Masuji Nishiyama

This inventor holds 2 USPTO granted patents and 2 published patent applications. Top assignee: Kabushiki Kaisha Toshiba. Active years: 2011-2012.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Masuji Nishiyama. Retrieved from https://idiyas.com/inventor/masuji-nishiyama

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 2 

% Patents Active = 100.0

Average Co-Inventor Count = 4.0

ph-index = 1

Forward Citations = 2(Granted Patents)


Company Filing History:


Years Active: 2011-2012

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2 patents (USPTO):Explore Patents

Title: Masuji Nishiyama: Innovator in Semiconductor Memory Technology

Introduction

Masuji Nishiyama is an inventor based in Habikino-shi, Japan. He is known for his contributions to semiconductor memory technology. Although he currently holds no granted patents, his innovative ideas have the potential to impact the field significantly.

Latest Patent Applications

One of his notable patent applications is for a semiconductor memory that features a burst mode reading function synchronized with a clock signal. This invention includes a memory array composed of multiple memory cells, a sync read control circuit, a sense amplifier, a decoder, an address latch, a page selector, and an output latch. Each component works in harmony to enhance the efficiency and speed of memory access.

Conclusion

Masuji Nishiyama's work in semiconductor memory technology showcases his innovative spirit and dedication to advancing the field. His contributions, although not yet recognized through granted patents, reflect a commitment to developing cutting-edge solutions in technology.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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