Cesena, Italy

Massimo Zambianchi


 

Average Co-Inventor Count = 5.7

ph-index = 1

Forward Citations = 13(Granted Patents)


Location History:

  • Cesena FC, IT (2016)
  • Cesena, IT (2005 - 2017)

Company Filing History:


Years Active: 2005-2025

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6 patents (USPTO):Explore Patents

Title: Massimo Zambianchi: Innovator in Semiconductor and Material Treatment Technologies

Introduction

Massimo Zambianchi is a notable inventor based in Cesena, Italy. He has made significant contributions to the fields of material treatment and organic semiconductor technologies. With a total of six patents to his name, Zambianchi's work reflects a commitment to innovation and advancement in his areas of expertise.

Latest Patents

Zambianchi's latest patents include a method for the treatment of a porous substrate. This method involves hollow fibre membranes that are treated with graphene oxide in the presence of a liquid, resulting in a treated material that incorporates the graphene oxide into the substrate. Another significant patent describes novel compounds that serve as organic semiconductor materials, along with semiconductor devices that utilize these materials.

Career Highlights

Throughout his career, Zambianchi has worked with various organizations, including E.T.C. S.r.l. and the National Research Council of Italy (Consiglio Nazionale Delle Ricerche). His work in these institutions has allowed him to develop and refine his innovative ideas, contributing to advancements in technology.

Collaborations

Zambianchi has collaborated with notable colleagues, including Laura Favaretto and Manuela Melucci. These partnerships have likely enriched his research and development efforts, fostering a collaborative environment for innovation.

Conclusion

Massimo Zambianchi stands out as a prominent inventor whose work in material treatment and organic semiconductors has the potential to influence various technological applications. His patents and collaborations reflect a dedication to pushing the boundaries of innovation in his field.

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