This inventor holds 1 USPTO granted patent. Top assignee: The University of Texas System. Active years: 2017.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile
Company Filing History:
Years Active: 2017
Title: Massimo V Fischetti: Innovator in Memory Device Technology
Introduction
Massimo V Fischetti is a prominent inventor based in Richardson, TX (US). He has made significant contributions to the field of memory devices, particularly through his innovative patent that explores the intersection of ferromagnetism and spin-polarized current injection.
Latest Patents
Fischetti holds a patent for "Memory devices based on gate controlled ferromagnetism and spin-polarized current injection." This invention provides a device structure that includes a two-dimensional (2D) topological insulator (TI) with an active area body. The design features one or a pair of ferromagnetic storage units positioned atop the 2D TI, along with a dielectric and a gate. The configuration allows for efficient transport along a one-dimensional edge, facilitating read and write operations through the application of biases via the gate and contacts. He has 1 patent to his name.
Career Highlights
Fischetti is affiliated with the University of Texas System, where he continues to advance research in memory technology. His work has garnered attention for its potential applications in next-generation memory devices.
Collaborations
He has collaborated with notable colleagues, including William G Vandenberghe and Christopher L Hinkle, contributing to the advancement of research in his field.
Conclusion
Massimo V Fischetti's innovative work in memory devices showcases his expertise and commitment to advancing technology. His contributions are paving the way for future developments in the field.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile