Massimo Cuscuna′

Title: Massimo Cuscuna′: Innovator in MOS Device Manufacturing

Introduction

Massimo Cuscuna′ is a notable inventor based in Rome, Italy. He has made significant contributions to the field of semiconductor technology, particularly in the manufacturing of large-scale integration MOS devices. His innovative approach has led to advancements that benefit the electronics industry.

Latest Patents

Cuscuna′ holds a patent for a "Process for manufacturing a large-scale integration MOS device and corresponding MOS device." This patent describes a method that includes forming a gate structure above a semiconductor layer, creating a first doped region within the semiconductor layer, and irradiating this region with electromagnetic radiation for annealing. Additionally, a dielectric mirror is formed above another surface portion of the semiconductor layer to protect underlying regions from electromagnetic radiation.

Career Highlights

Throughout his career, Massimo Cuscuna′ has worked with prominent companies such as STMicroelectronics S.r.l. and the National Research Council of Italy (Consiglio Nazionale Delle Ricerche). His work in these organizations has allowed him to develop and refine his innovative techniques in semiconductor manufacturing.

Collaborations

Cuscuna′ has collaborated with notable professionals in his field, including Dario Salinas and Guglielmo Fortunato. These collaborations have contributed to the advancement of technology in the semiconductor industry.

Conclusion

Massimo Cuscuna′ is a distinguished inventor whose work in MOS device manufacturing has had a lasting impact on the electronics sector. His innovative processes and collaborations continue to influence the development of semiconductor technologies.