Masayuki Masuda

Title: The Innovations of Masayuki Masuda

Masayuki Masuda is a prominent inventor based in Hyogo, Japan. He has made significant contributions to the field of semiconductor technology. His work focuses on enhancing the reliability of semiconductor devices, particularly in high-voltage applications.

Latest Patents

Masuda holds a patent for a semiconductor device interconnected to an analog IC driven by high voltage. This invention involves a MOS type LSI that comprises an n channel-open-drain-transistor capable of connecting with an analog IC driven by high voltage. The design increases the surge breakdown voltage and drain breakdown voltage of the open-drain-transistor, thereby enhancing its reliability. The n channel-open-drain-transistor features a ring-shaped gate electrode and a drain region, which is surrounded by the gate electrode. The drain region includes both an n^- region and an n+ region. Notably, the impurity concentration of the n^- drain region of the n channel-open-drain-transistor is higher than that of the n channel MOS transistor.

Career Highlights

Masuda is associated with Mitsubishi Electric Corporation, where he has been instrumental in advancing semiconductor technologies. His innovative approach has led to improvements in device performance and reliability, making significant impacts in the industry.

Collaborations

Masuda has collaborated with Kazuaki Miyata, contributing to the development of advanced semiconductor solutions. Their partnership has fostered innovation and enhanced the capabilities of their projects.

Conclusion

Masayuki Masuda's contributions to semiconductor technology exemplify the importance of innovation in enhancing device reliability. His patent and collaborative efforts continue to influence the field positively.