Company Filing History:
Years Active: 2001
Title: Masayuki Ino: Innovator in Semiconductor Technology
Introduction
Masayuki Ino is a prominent inventor based in Ebina, Japan. He has made significant contributions to the field of semiconductor technology, particularly with his innovative designs that enhance the functionality of semiconductor devices. His work has garnered attention for its potential applications in various electronic systems.
Latest Patents
Masayuki Ino holds a patent for a semiconductor device that includes a silicon layer and an insulating layer formed on top of it. This invention features a first semiconductor device that converts light into an electric signal and a second semiconductor device that is shielded from light by a silicon region. A unique aspect of this design is the through hole that allows light to input into the first semiconductor device while protecting the second device. This patent showcases his expertise in creating efficient and effective semiconductor solutions. He has 1 patent to his name.
Career Highlights
Ino is currently employed at NTT Electronics Corporation, where he continues to develop cutting-edge technologies in the semiconductor field. His role at the company allows him to collaborate with other talented engineers and researchers, further advancing the state of semiconductor technology.
Collaborations
Throughout his career, Masayuki Ino has worked alongside notable colleagues such as Tetsushi Sakai and Nobuaki Ieda. These collaborations have contributed to the development of innovative solutions and have fostered a creative environment for technological advancement.
Conclusion
Masayuki Ino's contributions to semiconductor technology exemplify the impact of innovative thinking in the electronics industry. His patent and ongoing work at NTT Electronics Corporation highlight his commitment to advancing technology and improving electronic devices.