The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 08, 2001
Filed:
Aug. 28, 1998
Tetsushi Sakai, Atsugi, JP;
Nobuaki Ieda, Chigasaki, JP;
Masayuki Ino, Ebina, JP;
Shigeru Nakajima, Chigasaki, JP;
Yukio Akazawa, Isehara, JP;
Tsuneo Mano, Ebina, JP;
Hiroshi Inokawa, Atsugi, JP;
NTT Electronics Corporation, Tokyo, JP;
Abstract
This invention provides a semiconductor device including a silicon layer, an insulating layer formed on the silicon layer, a first semiconductor device formed on the insulating film to convert light into an electric signal, and a second semiconductor device formed on the insulating film, wherein a silicon region is formed in the silicon layer to shield the second semiconductor device from light, and a through hole extending through the silicon layer except for the silicon region to input light to the first semiconductor device is formed in that portion of the silicon layer corresponding to the lower portions of the first and second semiconductor devices.