Masayasu Miyake

Title: Masayasu Miyake: Innovator in Semiconductor Technology

Introduction

Masayasu Miyake is a prominent inventor based in Ebina, Japan. He has made significant contributions to the field of semiconductor technology, holding 2 patents that showcase his innovative approaches to device fabrication.

Latest Patents

Miyake's latest patents include a method for fabricating complementary metal-insulator-semiconductor (CMOS) devices. This method involves the formation of polysilicon gates for complementary-type field-effect semiconductor devices, where the gates are constructed from polysilicon doped with impurities during deposition. The dual N.sup.+ /P.sup.+ polysilicon gate structure allows for the creation of both N- and P-channel transistors as surface-channel types. This advancement improves off-characteristics, mitigates short channel effects, and enhances the controllability of threshold voltage. Specifically, N-channel and P-channel metal-insulator-semiconductor field-effect transistors (MISFETs) are developed on a common semiconductor substrate, utilizing N-type and P-type polysilicon as gate electrodes, respectively.

Career Highlights

Miyake is currently associated with Nippon Telegraph and Telephone Corporation, where he continues to push the boundaries of semiconductor technology. His work has been instrumental in advancing the efficiency and performance of semiconductor devices.

Collaborations

Some of his notable coworkers include Yukio Okazaki and Takashi Morimoto, who have collaborated with him on various projects within the semiconductor field.

Conclusion

Masayasu Miyake's contributions to semiconductor technology through his innovative patents have significantly impacted the industry. His work exemplifies the importance of research and development in advancing modern technology.