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For the Inventor, By the Inventor

Amagasaki, Japan

Masaya Oita

This inventor holds 8 USPTO granted patents. Top assignee: Mitsubishi Denki Kabushiki Kaisha. Active years: 1992-2000.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Masaya Oita. Retrieved from https://idiyas.com/inventor/masaya-oita

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 8

% Patents Active = 100.0

Average Co-Inventor Count = 5.2

ph-index = 6

Forward Citations = 193(Granted Patents)


Location History:

  • Hyogo, JP (1993 - 1996)
  • Amagasaki, JP (1992 - 2000)

Company Filing History:

goldMedal8 out of 21,351 
 
Mitsubishi Denki Kabushiki Kaisha
 patents

Years Active: 1992-2000

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8 patents (USPTO):Explore Patents
1. 6087703 - Photodetector and photodetection circuit (2000-07-11),
2. 5581094 - Photodetector, a photodector array comprising photodetectors, an object (1996-12-03),
3. 5504884 - Information retrieval system (1996-04-02),
4. 5479569 - Intelligence information processing method (1995-12-26),
5. 5418886 - Knowledge information processing system including two associative memory (1995-05-23),
6. 5257343 - Intelligence information processing system (1993-10-26),
7. 5220642 - Optical neurocomputer with dynamic weight matrix (1993-06-15),
8. 5095459 - Optical neural network (1992-03-10),

Title: The Innovative Contributions of Masaya Oita

Introduction

Masaya Oita is a prominent inventor based in Amagasaki, Japan. He has made significant contributions to the field of photodetection technology, holding a total of 8 patents. His work focuses on developing advanced devices that convert light into electrical signals, enhancing the capabilities of photodetectors.

Latest Patents

One of Oita's latest patents is a photodetector and photodetection circuit. This innovative device is designed to convert incident light into an electrical signal using two pn junctions or two MOS junctions fabricated in a silicon substrate. A control terminal is strategically placed between the two junctions, allowing for variable sensitivity in the photodetection circuit. This circuit can change the polarity of the output signal, providing a bias voltage of either polarity to the photodetector device. Additionally, the photodetector features a semiconductor substrate that generates light-induced charge upon absorbing incident light. By applying a variable control voltage, the photosensitivity of the device can be effectively controlled.

Career Highlights

Masaya Oita is currently employed at Mitsubishi Electric Corporation, where he continues to innovate and develop cutting-edge technologies. His expertise in photodetection has positioned him as a key figure in the advancement of this field.

Collaborations

Oita has collaborated with notable coworkers, including Kazuo Kyuma and Shuichi Tai, contributing to various projects that enhance the functionality and efficiency of photodetectors.

Conclusion

Masaya Oita's contributions to photodetection technology exemplify his innovative spirit and dedication to advancing the field. His patents reflect a deep understanding of semiconductor technology and its applications, making him a valuable asset in the realm of invention.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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