Yamatokoriyama, Japan

Masaya Hijikihigawa

This inventor holds 1 USPTO granted patent. Top assignee: Sharp Kabushiki Kaisha Corporation. Active years: 1992.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Masaya Hijikihigawa. Retrieved from https://idiyas.com/inventor/masaya-hijikihigawa

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank

% Patents Active = 100.0

Average Co-Inventor Count = 2.0

ph-index = 1

Forward Citations = 332(Granted Patents)


Company Filing History:


Years Active: 1992

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1 patent (USPTO):Explore Patents

Title: Masaya Hijikihigawa: Innovator in Sensor Technology

Introduction

Masaya Hijikihigawa is a prominent inventor based in Yamatokoriyama, Japan. He has made significant contributions to the field of sensor technology, particularly with his innovative designs that enhance the performance and functionality of various sensor devices.

Latest Patents

Masaya holds 1 patent for a sensor device. This device comprises a substrate and a sensor formed from materials such as metal, metallic oxide, semiconductor, dielectric, or organic material. The sensor features projections or indentations on its surface, which can be shaped and dimensioned according to specific requirements. This invention is particularly useful as a chemical sensor, biosensor, or physical sensor device, offering improved performance and function.

Career Highlights

Masaya is currently associated with Sharp Corporation, where he continues to develop cutting-edge technologies in the sensor domain. His work has been instrumental in advancing the capabilities of sensor devices, making them more efficient and reliable.

Collaborations

Masaya collaborates with Shoei Kataoka, a fellow innovator, to further enhance their research and development efforts in sensor technology.

Conclusion

Masaya Hijikihigawa's contributions to sensor technology exemplify the spirit of innovation. His work not only advances the field but also paves the way for future developments in sensor applications.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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