Company Filing History:
Years Active: 2012-2013
Title: Masatoshi Nishikawa: Innovator in Semiconductor Technology
Introduction
Masatoshi Nishikawa is a prominent inventor based in Yokohama, Japan. He has made significant contributions to the field of semiconductor technology, holding a total of four patents. His work focuses on enhancing the performance and manufacturing processes of semiconductor devices.
Latest Patents
Nishikawa's latest patents include a semiconductor device that features a gate insulating film, a gate electrode, a source/drain region, and a Si mixed crystal layer within the source/drain region. This innovative design incorporates multiple Si mixed crystal layers with varying impurity concentrations, optimizing the device's functionality. Additionally, he has developed a method for manufacturing semiconductor devices, which involves several steps such as forming a gate electrode, creating a dopant implantation area, and etching the semiconductor substrate to form recesses for source and drain areas.
Career Highlights
Masatoshi Nishikawa is currently employed at Fujitsu Semiconductor Limited, where he continues to advance semiconductor technology. His expertise and innovative approaches have positioned him as a key figure in the industry.
Collaborations
Nishikawa has collaborated with notable colleagues, including Masahiro Fukuda and Ken Sugimoto, contributing to various projects that enhance semiconductor technology.
Conclusion
Masatoshi Nishikawa's work in semiconductor technology exemplifies innovation and dedication. His patents and contributions continue to influence the field, showcasing the importance of research and development in advancing technology.