The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 17, 2012
Filed:
Sep. 09, 2010
Applicant:
Masatoshi Nishikawa, Yokohama, JP;
Inventor:
Masatoshi Nishikawa, Yokohama, JP;
Assignee:
Fujitsu Semiconductor Limited, Yokohama, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/78 (2006.01); H01L 21/336 (2006.01);
U.S. Cl.
CPC ...
Abstract
A semiconductor device includes, a gate insulating film, a gate electrode, a source/drain region, and a Si mixed crystal layer in the source/drain region. The Si mixed crystal layer includes a first Si mixed crystal layer that includes impurities with a first concentration, a second Si mixed crystal layer formed over the first Si mixed crystal layer and that includes the impurities with a second concentration higher than the first concentration, and a third Si mixed crystal layer formed over the second Si mixed crystal layer and that includes the impurities with a third concentration lower than the second concentration.