Yamanashi, Japan

Masato Fujita


Average Co-Inventor Count = 5.1

ph-index = 2

Forward Citations = 118(Granted Patents)


Location History:

  • Yamanashi, JA (1976)
  • Yamanashi, JP (1988)

Company Filing History:


Years Active: 1976-1988

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2 patents (USPTO):Explore Patents

Title: Masato Fujita: Innovator in Semiconductor Technology

Introduction

Masato Fujita is a prominent inventor based in Yamanashi, Japan. He has made significant contributions to the field of semiconductor technology, holding a total of 2 patents. His innovative approaches have advanced the methods used in the treatment and growth of semiconductor wafers.

Latest Patents

Fujita's latest patents include a method for vapor phase growth on semiconductor wafers. This invention involves an apparatus where multiple semiconductor wafers are held vertically and rotated within a heater in a reaction vessel. The design includes a raw material gas supply nozzle and an exhaust nozzle, allowing for a uniform layer to be grown on each wafer as the temperature is raised. Another notable patent is a method of treating semiconductor wafers, where a stack of wafers is immersed in an etchant to etch their peripheral surfaces. This method can be applied to sliced semiconductor, metallic, or ceramic wafers.

Career Highlights

Throughout his career, Masato Fujita has worked with notable companies such as Hitachi, Ltd. and Kokusai Electric Co., Ltd. His experience in these organizations has contributed to his expertise in semiconductor technologies and innovations.

Collaborations

Fujita has collaborated with several professionals in his field, including Yosuke Inoue and Takaya Suzuki. These collaborations have further enriched his work and contributed to advancements in semiconductor technology.

Conclusion

Masato Fujita is a key figure in the semiconductor industry, with his patents reflecting his innovative spirit and technical expertise. His contributions continue to influence the development of semiconductor technologies.

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