Nagaokakyo, Japan

Masashi Maruyama

This inventor holds 2 USPTO granted patents. Top assignee: Murata Manufacturing Co., Ltd.. Active years: 2016-2025.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Masashi Maruyama. Retrieved from https://idiyas.com/inventor/masashi-maruyama-bya0kx94

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


% Patents Active = 100.0

Average Co-Inventor Count = 1.3

ph-index = 1

Forward Citations = 6(Granted Patents)


Company Filing History:


Years Active: 2016-2025

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2 patents (USPTO):Explore Patents

Title: Masashi Maruyama: Innovator in Semiconductor Technology

Introduction

Masashi Maruyama is a prominent inventor based in Nagaokakyo, Japan. He has made significant contributions to the field of semiconductor technology, holding 2 patents that showcase his innovative approach to electronic circuits.

Latest Patents

One of his latest patents is a power amplifier circuit. This circuit includes an amplifier transistor that amplifies a radio-frequency signal and outputs the radio-frequency signal. It features a bias circuit that supplies a bias current to the base of the amplifier transistor. The bias circuit consists of a bias current supply transistor and an electrostatic capacity circuit. The electrostatic capacity varies according to the temperature of the amplifier transistor and is charged during a non-supply period. It discharges to a supply path for the bias current during a supply period, which includes an amplification period when the radio-frequency signal is amplified. Notably, the bias current begins to be supplied before the amplifier transistor starts amplification.

Another significant patent is a semiconductor module. This module includes a circuit substrate and two semiconductor device substrates. The first substrate processes an input signal of a first frequency band, while the second substrate processes an input signal of a second frequency band. A control device substrate is arranged between the two semiconductor device substrates to manage their operations effectively.

Career Highlights

Masashi Maruyama is currently employed at Murata Manufacturing Co., Ltd., a leading company in the electronics industry. His work focuses on developing advanced semiconductor technologies that enhance the performance of electronic devices.

Collaborations

He collaborates with Naofumi Takezono, contributing to innovative projects within the company.

Conclusion

Masashi Maruyama's contributions to semiconductor technology through his patents reflect his expertise and commitment to innovation. His work continues to influence the development of electronic circuits and devices.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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