Yokohama, Japan

Masashi Ikeda

This inventor holds 1 USPTO granted patent. Top assignee: Tokyo Shibaura Electric Co., Ltd.. Active years: 1982.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Masashi Ikeda. Retrieved from https://idiyas.com/inventor/masashi-ikeda-xrio6es7

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


% Patents Active = 100.0

Average Co-Inventor Count = 2.0

ph-index = 1

Forward Citations = 40(Granted Patents)


Company Filing History:


Years Active: 1982

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1 patent (USPTO):Explore Patents

Title: The Innovations of Masashi Ikeda

Introduction

Masashi Ikeda is a notable inventor based in Yokohama, Japan. He has made significant contributions to the field of semiconductor technology. His work focuses on methods that enhance the efficiency and effectiveness of electronic components.

Latest Patents

Masashi Ikeda holds a patent for a "Method of forming electrodes on the surface of a semiconductor substrate." This innovative method involves specific steps to create electrodes that improve the performance of semiconductor devices. His patent is a testament to his expertise and dedication to advancing technology in this area. He has 1 patent to his name.

Career Highlights

Ikeda is associated with Tokyo Shibaura Electric Co., Ltd., a company known for its advancements in electrical and electronic engineering. His role at the company has allowed him to work on cutting-edge technologies that have a significant impact on the industry.

Collaborations

Masashi Ikeda has collaborated with Shintaro Ito, a fellow innovator in the field. Their partnership has contributed to the development of new technologies and methods that push the boundaries of semiconductor applications.

Conclusion

Masashi Ikeda's contributions to semiconductor technology through his innovative patent and collaboration with industry professionals highlight his importance in the field. His work continues to influence advancements in electronic components and systems.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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