Company Filing History:
Years Active: 2007-2008
Title: Biography of Inventor Masashi Goto
Introduction: Masashi Goto is a prominent inventor based in Yokohama, Japan. He has made significant contributions to the field of plasma processing and thin-film technology. With a total of three patents to his name, Goto's work has advanced the understanding and application of silicon oxide film formation.
Latest Patents: Goto's latest patents include a thin-film forming method using silane and an oxidizing gas. This innovative method involves supplying at least three kinds of gases, including a silicon compound gas, an oxidizing gas, and a rare gas, into a plasma processing chamber. The method ensures that the percentage of the partial pressure of the rare gas is not smaller than 85%, allowing for the effective generation of plasma to form a silicon oxide film on a substrate. Another notable patent is for a plasma processing apparatus, which features a chamber for generating plasma, a dielectric member for airtight coverage, and a wave guide with adjustable hole areas to optimize plasma generation.
Career Highlights: Throughout his career, Masashi Goto has worked with several esteemed organizations. He has been associated with Advanced LCD Technologies Development Center Co., Ltd. and Kabushiki Kaisha Ekisho Sentan Gijutsu Kaihatsu Center. His experience in these companies has contributed to his expertise in plasma processing technologies.
Collaborations: Goto has collaborated with notable professionals