Hachioji, Japan

Masaru Osani

This inventor holds 1 USPTO granted patent. Top assignee: Hitachi, Ltd.. Active years: 1988.


% Patents Active = 100.0

Average Co-Inventor Count = 6.0

ph-index = 1

Forward Citations = 14(Granted Patents)


Company Filing History:


Years Active: 1988

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1 patent (USPTO):Explore Patents

Title: Masaru Osani: Innovator in Signal Transfer Circuits

Introduction

Masaru Osani is a notable inventor based in Hachioji, Japan. He has made significant contributions to the field of electrical engineering, particularly in the development of signal transfer circuits for laminated multilayer electric circuits. His innovative work has led to advancements in high-speed signal transfer technology.

Latest Patents

Masaru Osani holds a patent for a signal transfer circuit designed for use in laminated multilayer electric circuits. This circuit allows for the transfer of signals between wafers through an electrostatic capacitor. The design features a receiving circuit with high input resistance, enabling efficient signal reception from a capacitance electrode. Additionally, the circuit clamps the signal level within the input amplitude, facilitating high-speed signal transfer without the need for flip-flops or similar components.

Career Highlights

Osani is associated with Hitachi, Ltd., a leading company in technology and innovation. His work at Hitachi has allowed him to explore and develop cutting-edge technologies that enhance the performance of electronic devices. His contributions have been instrumental in advancing the capabilities of multilayer electric circuits.

Collaborations

Throughout his career, Masaru Osani has collaborated with esteemed colleagues, including Akira Masaki and Minoru Yamada. These collaborations have fostered a creative environment that encourages innovation and the sharing of ideas.

Conclusion

Masaru Osani's contributions to the field of electrical engineering, particularly in signal transfer circuits, highlight his role as an influential inventor. His work continues to impact the development of advanced electronic technologies.

Profile summary based on public USPTO records.
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