Masaru Nakagawa

Title: Masaru Nakagawa: Innovator in Semiconductor Technology

Introduction

Masaru Nakagawa is a prominent inventor based in Hitachi, Japan. He has made significant contributions to the field of semiconductor technology, particularly in the development of gate turn-off thyristors. His innovative work has led to advancements that enhance the performance and reliability of electronic devices.

Latest Patents

Masaru Nakagawa holds a patent for a "Gate turn-off thyristor with selective anode penetrating shorts." This invention features a semiconductor substrate with a P.sub.E -N.sub.B -P.sub.B -N.sub.E four-layer structure. The design includes a P.sub.E -layer that is short-circuited through an N.sub.B -layer and an anode. The N.sub.B -layer is characterized by heavily doped regions that ensure low resistance contact with the anode. The structure is designed to maintain satisfactory gate turn-off characteristics without the need for doping the semiconductor substrate with a life time killer impurity.

Career Highlights

Masaru Nakagawa is associated with Hitachi, Ltd., a leading company in technology and innovation. His work has been instrumental in advancing semiconductor devices, which are crucial for modern electronics. His patent reflects his expertise and commitment to improving electronic components.

Collaborations

Masaru Nakagawa has collaborated with notable colleagues, including Takahiro Nagano and Isamu Sanpei. These collaborations have contributed to the development of innovative technologies in the semiconductor industry.

Conclusion

Masaru Nakagawa's contributions to semiconductor technology through his patent and collaborations highlight his role as an influential inventor. His work continues to impact the field, paving the way for future innovations in electronics.