The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 22, 1984
Filed:
Jun. 12, 1981
Takahiro Nagano, Hitachi, JP;
Isamu Sanpei, Kitaibaraki, JP;
Shuroku Sakurada, Hitachi, JP;
Masaru Nakagawa, Hitachi, JP;
Hitachi, Ltd., Tokyo, JP;
Abstract
A gate turn-off thyristor of a short-circuited emitter configuration comprises a semiconductor substrate of a P.sub.E -N.sub.B -P.sub.B -N.sub.E four-layer structure, wherein a P.sub.E -layer is short-circuited through a N.sub.B -layer and an anode. The N.sub.B -layer includes heavily doped regions to which the anode is ohmic contacted with a low resistance. The P.sub.E -layer is provided at a location at least covered by a projection of the N.sub.E -layer. The thickness of the heavily doped regions is greater than that of the P.sub.E -layer. The improved structure assures satisfactory gate turn-off characteristics, although the semiconductor substrate is not doped with a life time killer impurity.