Tokyo, Japan

Masanaga Fukusawa

This inventor holds 1 USPTO granted patent. Top assignee: Sony Corporation. Active years: 2018.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Masanaga Fukusawa. Retrieved from https://idiyas.com/inventor/masanaga-fukusawa

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank

% Patents Active = 100.0

Average Co-Inventor Count = 2.0

ph-index = 1


Company Filing History:


Years Active: 2018

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1 patent (USPTO):Explore Patents

Title: Masanaga Fukusawa: Innovator in Plasma Treatment Technology

Introduction

Masanaga Fukusawa is a prominent inventor based in Tokyo, Japan. He has made significant contributions to the field of semiconductor manufacturing through his innovative approaches to plasma treatment technology. His work has implications for enhancing the efficiency and effectiveness of semiconductor devices.

Latest Patents

Fukusawa holds a patent for a plasma treatment method, plasma treatment apparatus, and semiconductor device manufacturing method. This patent involves creating a plasma from a mixed gas containing carbon and nitrogen to generate CN active species. The method is designed to treat the surface of a semiconductor substrate with these active species, thereby improving the manufacturing process.

Career Highlights

Fukusawa is associated with Sony Corporation, where he has been instrumental in advancing semiconductor technologies. His expertise in plasma treatment methods has positioned him as a key figure in the development of innovative solutions within the company.

Collaborations

Fukusawa collaborates with Nobuyuki Kuboi, another talented professional in the field. Their combined efforts contribute to the ongoing advancements in semiconductor technology.

Conclusion

Masanaga Fukusawa's work in plasma treatment technology exemplifies the innovative spirit that drives progress in semiconductor manufacturing. His contributions are vital for the future of this industry.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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