Location History:
- Kanagawa, JP (1990)
- Tokyo, JP (1995 - 1996)
- Kawasaki, JP (1996)
Company Filing History:
Years Active: 1990-1996
Title: Masami Watase: Innovator in Silicon Technology
Introduction
Masami Watase is a prominent inventor based in Tokyo, Japan. He has made significant contributions to the field of silicon technology, holding a total of 4 patents. His innovative work has advanced the methods of fabricating silicon oxide films, which are crucial in various applications.
Latest Patents
Watase's latest patents include a method for creating a phase shift mask and an apparatus for forming a silicon oxide film on a silicon wafer. The phase shift mask patent describes a process where a photoresist pattern is formed on a quartz substrate. The substrate is then dipped into a silicon oxide supersaturated solution of hydrofluoric acid, leading to the precipitation of silicon oxide on the exposed surface. This process results in the formation of an SiO.sub.2 film that acts as a phase shifter. His second patent outlines a method for forming a silicon oxide film on a silicon wafer, which involves maintaining a supersaturated hydrofluoric acid solution at a specific temperature to create a silicon oxide film on the wafer's surface.
Career Highlights
Masami Watase is currently employed at Kabushiki Kaisha Toshiba, where he continues to innovate in the field of semiconductor technology. His work has been instrumental in enhancing the efficiency and effectiveness of silicon-based devices.
Collaborations
Watase collaborates with notable colleagues, including Katsuya Okumura and Masako Kodera, who contribute to his research and development efforts. Their teamwork fosters an environment of innovation and creativity.
Conclusion
Masami Watase's contributions to silicon technology through his patents and collaborations highlight his role as a key inventor in the field. His work continues to influence advancements in semiconductor manufacturing and technology.