Company Filing History:
1 out of 50 
1 out of 2,916 
Years Active: 1985-1987
Title: The Innovations of Masami Konaka
Introduction
Masami Konaka is a notable inventor based in Kawasaki, Japan. She has made significant contributions to the field of semiconductor technology, particularly in the manufacturing of MOS devices. With a total of two patents to her name, her work has had a lasting impact on the industry.
Latest Patents
Konaka's latest patents include a method of manufacturing a MOS device. This method involves selectively etching a semiconductor substrate to form a groove in both the field region and the element formation region. The angle formed between the wall of the groove and a first imaginary extension of the top surface of the element formation region must satisfy the relation of 70 degrees to 90 degrees. Following this, a field insulating film is deposited in the groove, and a MOS transistor is formed in the element formation region, which contains source, drain, and channel regions of a field effect transistor. Additionally, her patent on an MOS semiconductor device describes a buried region of silicon oxide or silicon nitride that extends partly over the bottom plane of the channel region of an MOS transistor.
Career Highlights
Throughout her career, Masami Konaka has worked with prominent organizations such as the VLSI Technology Research Association and Tokyo Shibaura Denki. Her experience in these companies has allowed her to refine her skills and contribute to groundbreaking advancements in semiconductor technology.
Collaborations
Konaka has collaborated with esteemed colleagues in her field, including Hiroshi Iwai and Yoshio Nishi. These partnerships have fostered innovation and have been instrumental in the development of her patents.
Conclusion
Masami Konaka's contributions to the field of semiconductor technology through her innovative patents highlight her expertise and dedication. Her work continues to influence the industry and pave the way for future advancements.