Masami Hashimoto

Title: Masami Hashimoto: Innovator in Integrated Circuit Technology

Introduction

Masami Hashimoto is a prominent inventor based in Suwa, Japan. She has made significant contributions to the field of integrated circuit technology, holding a total of 2 patents. Her innovative work has paved the way for advancements in electronic devices.

Latest Patents

One of her latest patents is the Double Layer ROM Integrated Circuit. This invention features a first ROM comprised of a transistor matrix, where polycrystalline silicon forms the gates of the transistors. The arrangement allows for the formation of diodes at the crossing points, resulting in a second ROM that is comprised of a diode matrix. Both ROMs are layered on a common plane, enabling them to retain different information independently.

Another notable patent is the Low Voltage Regulation Circuit. This circuit is particularly suitable for supplying current to high-frequency loads. It consists of two P-channel MOSFETs with the same threshold voltage and two N-channel MOSFETs with different threshold voltages. The difference in threshold voltages provides a constant output, simplifying the circuit construction and minimizing the pattern area on the integrated circuit.

Career Highlights

Masami Hashimoto is associated with Kabushiki Kaisha Suwa Seikosha, where she continues to innovate and contribute to the field of electronics. Her work has been instrumental in enhancing the efficiency and functionality of integrated circuits.

Conclusion

Masami Hashimoto's contributions to integrated circuit technology exemplify her role as a leading inventor in her field. Her patents reflect her commitment to innovation and her impact on the electronics industry.