This inventor holds 1 USPTO granted patent. Top assignee: Wacker Nsce Corporation. Active years: 2003.
Company Filing History:
Years Active: 2003
Title: Masami Hasebe: Innovator in Silicon Semiconductor Technology
Introduction
Masami Hasebe is a notable inventor based in Chiba, Japan. He has made significant contributions to the field of semiconductor technology, particularly in the production of silicon semiconductor wafers. His innovative approach has led to advancements that are crucial for various electronic applications.
Latest Patents
Hasebe holds a patent for a silicon semiconductor wafer and the method for producing the same. This patent describes a process where a silicon semiconductor substrate is derived from a silicon single crystal grown by the Czochralski method. The method involves using molten silicon with a specific nitrogen content and heat-treating the substrate at high temperatures. The resulting substrate exhibits a low density of crystal defects, making it suitable for high-performance applications.
Career Highlights
Masami Hasebe is currently associated with Wacker Nsce Corporation, where he continues to work on innovative semiconductor technologies. His expertise in the field has positioned him as a key figure in advancing semiconductor manufacturing processes.
Collaborations
Hasebe collaborates with various professionals in the industry, including his coworker Katsuhiko Nakai. Their combined efforts contribute to the ongoing development of cutting-edge semiconductor solutions.
Conclusion
Masami Hasebe's work in silicon semiconductor technology exemplifies the impact of innovation in the electronics industry. His contributions continue to shape the future of semiconductor manufacturing and applications.