Sagamihara, Japan

Masaki Ishino

This inventor holds 1 USPTO granted patent. Top assignee: Matsushita Electric Industrial Co., Ltd.. Active years: 2008.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Masaki Ishino. Retrieved from https://idiyas.com/inventor/masaki-ishino

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


Average Co-Inventor Count = 4.0

ph-index = 1

Forward Citations = 5(Granted Patents)


Company Filing History:


Years Active: 2008

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1 patent (USPTO):Explore Patents

Title: Masaki Ishino: Innovator in Semiconductor Design

Introduction

Masaki Ishino is a prominent inventor based in Sagamihara, Japan. He is known for his contributions to the field of semiconductor integrated circuits. His innovative approach focuses on reducing power consumption in electronic devices, which is crucial in today's energy-conscious environment.

Latest Patents

Masaki Ishino holds a patent for a low power consumption designing method of semiconductor integrated circuits. This patent outlines a comprehensive process that includes synthesizing a net list from an RTL description, conducting operation simulations, and constructing a flip-flop-to-flip-flop toggle information database. The method ultimately optimizes physical design operations to reduce power consumption effectively.

Career Highlights

Ishino is associated with Matsushita Electric Industrial Co., Ltd., a leading company in the electronics industry. His work has significantly impacted the design and efficiency of semiconductor devices, making them more sustainable and energy-efficient.

Collaborations

Some of his notable coworkers include Hiroki Tomoshige and Noriko Oosuka. Their collaborative efforts contribute to advancements in semiconductor technology and innovation.

Conclusion

Masaki Ishino's work exemplifies the importance of innovation in the semiconductor industry. His dedication to developing energy-efficient solutions continues to influence the field positively.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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