Masaki Fukumoto

Title: Masaki Fukumoto: Innovator in Semiconductor Memory Technology

Introduction

Masaki Fukumoto is a prominent inventor based in Osaka, Japan. He has made significant contributions to the field of semiconductor memory devices, particularly in the development of DRAM technology. With a total of 2 patents, Fukumoto's work has advanced the capabilities of memory storage solutions.

Latest Patents

Fukumoto's latest patents include innovative methods for creating trench capacitor DRAM cells. One patent discloses a semiconductor memory device that features multiple island regions, with at least one cell transistor on each island and a cylindrical capacitor surrounding each region. This design allows for an increased capacity of the cell capacitor within a compact space. Another patent outlines a method for fabricating a semiconductor memory device, which involves forming a groove in a semiconductor substrate, depositing a membrane with excellent coverage, and etching to create a capacity element and isolation region using a deep trench.

Career Highlights

Masaki Fukumoto is associated with Matsushita Electric Industrial Co., Ltd., where he has been instrumental in advancing semiconductor technologies. His innovative approaches have contributed to the efficiency and effectiveness of memory devices in various applications.

Collaborations

Fukumoto has collaborated with notable colleagues, including Genshu Fuse and Toshio Yamada. Their combined expertise has fostered advancements in semiconductor technology and memory device fabrication.

Conclusion

Masaki Fukumoto's contributions to semiconductor memory technology exemplify the impact of innovation in the field. His patents and collaborative efforts continue to shape the future of memory devices, enhancing their performance and capacity.