Masahide Inuishi

This inventor holds 22 USPTO granted patents, primarily in Semiconductor Devices. Top assignee: Mitsubishi Denki Kabushiki Kaisha. Active years: 1987-2002.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Masahide Inuishi. Retrieved from https://idiyas.com/inventor/masahide-inuishi

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 22

% Patents Active = 100.0

Average Co-Inventor Count = 2.2

ph-index = 10

Forward Citations = 353(Granted Patents)

Location History:

Hyogo, JP (1987 - 1995)
Hyogo-ken, JP (1996 - 1997)
Tokyo, JP (1998 - 2002)

Company Filing History:

22 out of 21,351

Mitsubishi Denki Kabushiki Kaisha

patents

Years Active: 1987-2002

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Areas of Expertise:

Semiconductor Device

Field Effect Transistor

MOS Type Transistor

Double Structured Well

DRAM Cell

Radiation Protection

Trench Capacitor

Polysilicon Source Drain

Integrated Circuit

Stacked Memory

22 patents (USPTO):Sort by Forward CitationsExplore Patents

1. 6420763 - Semiconductor device having a retrograde well structure and method of manufacturing thereof (2002-07-16),

2. 5852327 - Semiconductor device (1998-12-22),

3. 5648284 - Field effect transistor including silicon oxide film and nitrided oxide (1997-07-15),

4. 5554876 - Field effect transistor including silicon oxide film and nitrided oxide (1996-09-10),

5. 5536665 - Method of manufacturing a semiconductor device with double structured (1996-07-16),

6. 5446305 - Semiconductor device with double structured well (1995-08-29),

7. 5369297 - Field effect transistor including silicon oxide film and nitrided oxide (1994-11-29),

8. 5268321 - Method of making DRAM cell having improved radiation protection (1993-12-07),

9. 5258321 - Manufacturing method for semiconductor memory device having stacked (1993-11-02),

10. 5258319 - Method of manufacturing a MOS type field effect transistor using an (1993-11-02),

11. 5217913 - Method of manufacturing an MIS device having lightly doped drain (1993-06-08),

12. 5200918 - Static semiconductor memory with polysilicon source drain transistors (1993-04-06),

13. 5200353 - Method of manufacturing a semiconductor device having trench capacitor (1993-04-06),

14. 5183771 - Method of manufacturing LDDFET having double sidewall spacers (1993-02-02),

15. 5166763 - Static type semiconductor memory device and method of manufacturing (1992-11-24),

Title: **Masahide Inuishi: Innovator in Semiconductor Technology**

Introduction

Masahide Inuishi, based in Hyogo, Japan, is an esteemed inventor known for his significant contributions to the semiconductor industry. With a remarkable portfolio of 22 patents, Inuishi has established himself as a leading figure in advancing semiconductor technologies.

Latest Patents

Inuishi's recent innovations include groundbreaking patents such as the "Semiconductor device having a retrograde well structure and method of manufacturing thereof." This patent describes a semiconductor substrate that consists of a first conductivity type and a retrograde well impurity concentration. It details the formation of impurity layers with varying concentrations to enhance semiconductor performance. Another notable patent is simply titled "Semiconductor device," which outlines a design with multiple impurity layers of the same conductivity type, enhancing the device's efficiency and functionality.

Career Highlights

Currently, Masahide Inuishi is employed at Mitsubishi Denki Kabushiki Kaisha, a prominent company in the field of electricity and electronics. Throughout his career, he has been instrumental in developing innovative solutions that tackle the challenges faced in semiconductor manufacturing and design.

Collaborations

Inuishi has collaborated with several noteworthy colleagues, including Katsuhiro Tsukamoto and Masahiro Shimizu. Their combined expertise has fostered a collaborative environment that promotes the continuous improvement and evolution of semiconductor technologies.

Conclusion

Masahide Inuishi's extensive patent portfolio and his role at Mitsubishi Denki Kabushiki Kaisha highlight his contributions to the semiconductor field. Through innovation and collaboration, he continues to shape the future of technology, making significant strides in the development of advanced semiconductor devices.

Profile summary based on public USPTO records.

Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]