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For the Inventor, By the Inventor

Hyogo, Japan

Masahide Inuishi

USPTO Granted Patents = 22

Average Co-Inventor Count = 2.2

ph-index = 10

Forward Citations = 353(Granted Patents)


Location History:

  • Hyogo, JP (1987 - 1995)
  • Hyogo-ken, JP (1996 - 1997)
  • Tokyo, JP (1998 - 2002)

Company Filing History:

goldMedal22 out of 21,351 
 
Mitsubishi Denki Kabushiki Kaisha
 patents

Years Active: 1987-2002

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22 patents (USPTO):Explore Patents
1. 6420763 - Semiconductor device having a retrograde well structure and method of manufacturing thereof (2002-07-16),
2. 5852327 - Semiconductor device (1998-12-22),
3. 5648284 - Field effect transistor including silicon oxide film and nitrided oxide (1997-07-15),
4. 5554876 - Field effect transistor including silicon oxide film and nitrided oxide (1996-09-10),
5. 5536665 - Method of manufacturing a semiconductor device with double structured (1996-07-16),
6. 5446305 - Semiconductor device with double structured well (1995-08-29),
7. 5369297 - Field effect transistor including silicon oxide film and nitrided oxide (1994-11-29),
8. 5268321 - Method of making DRAM cell having improved radiation protection (1993-12-07),
9. 5258321 - Manufacturing method for semiconductor memory device having stacked (1993-11-02),
10. 5258319 - Method of manufacturing a MOS type field effect transistor using an (1993-11-02),
11. 5217913 - Method of manufacturing an MIS device having lightly doped drain (1993-06-08),
12. 5200918 - Static semiconductor memory with polysilicon source drain transistors (1993-04-06),
13. 5200353 - Method of manufacturing a semiconductor device having trench capacitor (1993-04-06),
14. 5183771 - Method of manufacturing LDDFET having double sidewall spacers (1993-02-02),
15. 5166763 - Static type semiconductor memory device and method of manufacturing (1992-11-24),

Title: **Masahide Inuishi: Innovator in Semiconductor Technology**

Introduction

Masahide Inuishi, based in Hyogo, Japan, is an esteemed inventor known for his significant contributions to the semiconductor industry. With a remarkable portfolio of 22 patents, Inuishi has established himself as a leading figure in advancing semiconductor technologies.

Latest Patents

Inuishi's recent innovations include groundbreaking patents such as the "Semiconductor device having a retrograde well structure and method of manufacturing thereof." This patent describes a semiconductor substrate that consists of a first conductivity type and a retrograde well impurity concentration. It details the formation of impurity layers with varying concentrations to enhance semiconductor performance. Another notable patent is simply titled "Semiconductor device," which outlines a design with multiple impurity layers of the same conductivity type, enhancing the device's efficiency and functionality.

Career Highlights

Currently, Masahide Inuishi is employed at Mitsubishi Denki Kabushiki Kaisha, a prominent company in the field of electricity and electronics. Throughout his career, he has been instrumental in developing innovative solutions that tackle the challenges faced in semiconductor manufacturing and design.

Collaborations

Inuishi has collaborated with several noteworthy colleagues, including Katsuhiro Tsukamoto and Masahiro Shimizu. Their combined expertise has fostered a collaborative environment that promotes the continuous improvement and evolution of semiconductor technologies.

Conclusion

Masahide Inuishi's extensive patent portfolio and his role at Mitsubishi Denki Kabushiki Kaisha highlight his contributions to the semiconductor field. Through innovation and collaboration, he continues to shape the future of technology, making significant strides in the development of advanced semiconductor devices.

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