Company Filing History:
Years Active: 2013
Title: Masafumi Suefuji: Innovator in Semiconductor Technology
Introduction
Masafumi Suefuji is a prominent inventor based in Chiba, Japan. He is known for his contributions to semiconductor technology, particularly in the development of MOS transistors. His innovative work has led to advancements in the field, making significant impacts on electronic devices.
Latest Patents
Masafumi Suefuji holds a patent for a semiconductor device. This invention focuses on MOS transistors that have a plurality of threshold voltages, where a source and a drain form a symmetrical structure. The patent describes how electrically-symmetrical characteristics are achieved when the source and drain are exchanged in each MOS transistor. Additionally, a MOS transistor with a large threshold voltage is equipped with a halo diffusion region, while halo implantation is not performed on a MOS transistor with a small threshold voltage.
Career Highlights
Masafumi Suefuji is associated with Hitachi, Ltd., a leading company in technology and electronics. His work at Hitachi has allowed him to explore and develop innovative solutions in semiconductor devices. His expertise in this area has contributed to the company's reputation for excellence in technology.
Collaborations
Masafumi Suefuji has collaborated with notable colleagues, including Kenji Miyakoshi and Shinichiro Wada. These collaborations have fostered a creative environment that encourages innovation and the sharing of ideas.
Conclusion
Masafumi Suefuji's contributions to semiconductor technology exemplify the spirit of innovation. His patent on MOS transistors showcases his ability to address complex challenges in the field. Through his work at Hitachi and collaborations with esteemed colleagues, he continues to influence the future of technology.