The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 05, 2013
Filed:
Dec. 22, 2009
Kenji Miyakoshi, Ome, JP;
Shinichiro Wada, Fuchu, JP;
Junji Noguchi, Akishima, JP;
Koichiro Miyamoto, Ome, JP;
Masaya Iida, Tachikawa, JP;
Masafumi Suefuji, Chiba, JP;
Kenji Miyakoshi, Ome, JP;
Shinichiro Wada, Fuchu, JP;
Junji Noguchi, Akishima, JP;
Koichiro Miyamoto, Ome, JP;
Masaya Iida, Tachikawa, JP;
Masafumi Suefuji, Chiba, JP;
Hitachi, Ltd., Tokyo, JP;
Abstract
When MOS transistors having a plurality of threshold voltages in which a source and a drain form a symmetrical structure are mounted on the same substrate, electrically-symmetrical characteristics is provided with respect to an exchange of the source and the drain in each MOS transistor. A MOS transistor having a large threshold voltage is provided with a halo diffusion region, and halo implantation is not performed on a MOS transistor having a small threshold voltage.