Kikuchi-gun, Japan

Masaaki Tsuruno


Average Co-Inventor Count = 2.0

ph-index = 1

Forward Citations = 7(Granted Patents)


Company Filing History:


Years Active: 2005

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1 patent (USPTO):Explore Patents

Title: Masaaki Tsuruno: Innovator in Substrate Processing Technology

Introduction

Masaaki Tsuruno is a notable inventor based in Kikuchi-gun, Japan. He has made significant contributions to the field of substrate processing technology. His innovative approach has led to the development of a unique apparatus that enhances the efficiency and effectiveness of substrate processing.

Latest Patents

Masaaki Tsuruno holds 1 patent for his invention titled "Substrate Processing Apparatus." This apparatus features lift pins that can move up and down to lift the substrate. It includes a heating plate with holes for the lift pins to protrude and sink to a surface facing the substrate. Additionally, a lid is placed above the heating plate, which is also capable of moving up and down. The apparatus incorporates a first inert gas introducing mechanism that introduces a first inert gas into the lid and a second mechanism that introduces a second inert gas onto the heating plate's surface through the holes. This configuration allows inert gas to be introduced to both sides of the substrate, effectively preventing oxidation by keeping oxygen from reaching the substrate's rear side.

Career Highlights

Masaaki Tsuruno is associated with Tokyo Electron Limited, a leading company in the semiconductor manufacturing equipment industry. His work at this company has been instrumental in advancing substrate processing technologies.

Collaborations

Masaaki Tsuruno collaborates with Yoichi Deguchi, contributing to the innovative projects at Tokyo Electron Limited.

Conclusion

Masaaki Tsuruno's contributions to substrate processing technology exemplify the impact of innovation in the semiconductor industry. His patent reflects a significant advancement in preventing substrate oxidation, showcasing his expertise and commitment to technological progress.

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