Beverly, MA, United States of America

Masaaki Hagiwara

This inventor holds 3 USPTO granted patents. Top assignee: Tokyo Electron Limited. Active years: 2004-2007.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Masaaki Hagiwara. Retrieved from https://idiyas.com/inventor/masaaki-hagiwara-8a61ewpk

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank

% Patents Active = 66.7

Average Co-Inventor Count = 4.3

ph-index = 3

Forward Citations = 46(Granted Patents)


Location History:

  • Inagi, JP (2004)
  • Beverly, MA (US) (2005 - 2007)

Company Filing History:


Years Active: 2004-2007

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3 patents (USPTO):Explore Patents

Title: Masaaki Hagiwara: A Pioneer in Plasma Ashing Technology

Introduction

Masaaki Hagiwara is an accomplished inventor based in Beverly, MA, whose work has significantly advanced the field of semiconductor manufacturing. With three patents to his name, Hagiwara has made notable contributions, especially in methods for removing photoresist and etch residues. His innovative approaches continue to influence industries reliant on precise etching techniques.

Latest Patents

Hagiwara's recent patents focus on improved plasma ashing methods vital for the semiconductor industry. One of his prominent inventions details a two-step plasma process using oxygen-containing gases. In the first step, low or zero bias is applied to effectively eliminate a substantial amount of photoresist remnants and etch residues from dielectric layers. This method also aids in cleaning harmful fluoro-carbon residues from the chamber surfaces. Subsequently, a higher bias is utilized in the second cleaning step, ensuring a thorough removal of remaining contaminants. This two-step process notably reduces the memory effect commonly encountered in traditional single-step ashing techniques. Additionally, an endpoint detection method is incorporated to monitor the ashing process's efficiency.

Another patent showcases a similar two-step approach using hydrogen-containing gases, further enhancing the reliability of plasma ash cleaning in semiconductor fabrication.

Career Highlights

Masaaki Hagiwara is associated with Tokyo Electron Limited, a leading company in the semiconductor equipment industry. His role at the company has allowed him to explore and implement groundbreaking technologies that simplify and improve manufacturing processes.

Collaborations

Throughout his career, Hagiwara has collaborated with esteemed colleagues such as Kouichiro Inazawa and Vaidyanathan Balasubramaniam. These collaborations have played a crucial part in refining the applications of his inventions and expanding the scope of research within the field.

Conclusion

Masaaki Hagiwara's inventive spirit and technical expertise continue to propel advancements in semiconductor technologies. His innovative methods for plasma ashing demonstrate a commitment to improving manufacturing processes in the industry. As his research and patents evolve, they hold great promise for future developments in semiconductor fabrication techniques.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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