Masaaki Fukase

Title: Masaaki Fukase: Innovator in Semiconductor Technology

Introduction

Masaaki Fukase is a prominent inventor based in Sendai, Japan. He has made significant contributions to the field of semiconductor technology, particularly in the area of vapor growth processes. His innovative approach has led to advancements that enhance the efficiency and effectiveness of semiconductor manufacturing.

Latest Patents

Masaaki Fukase holds a patent for a method titled "Vapor growth with monitoring." This patent involves the vapor growth of a doped semiconductor layer on a substrate. In this process, multiple sampling points are selected in both the layer to be grown and the substrate, treating each as a diffusion source. The method includes computation to provide the actual doping program necessary for achieving a desired doping profile. Additionally, it features monitoring means that oversee the vapor growth and relay information back to the computing means. This feedback allows for the rearrangement of the doping program and the issuance of commands to control the vapor growth. Notably, it has been found effective to invert the conductivity type of impurity at least two times, especially during the initial stages of vapor growth, to create a sharp profile of net impurity distribution.

Career Highlights

Masaaki Fukase is associated with the Semiconductor Research Foundation, where he applies his expertise in semiconductor technologies. His work has been instrumental in advancing the understanding and implementation of vapor growth techniques in the industry.

Collaborations

Masaaki Fukase has collaborated with Jun-ichi Nisizawa, contributing to the development of innovative semiconductor solutions.

Conclusion

Masaaki Fukase's contributions to semiconductor technology, particularly through his patent on vapor growth with monitoring, highlight his role as a key innovator in the field. His work continues to influence advancements in semiconductor manufacturing processes.