The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 30, 1984
Filed:
Jun. 14, 1982
Jun-ichi Nisizawa, Sendai, JP;
Masaaki Fukase, Sendai, JP;
Abstract
In vapor growth of a doped semiconductor layer on a substrate, a plurality of sampling points are selected in the layer to be grown and in the substrate and each treated as a diffusion source. Computation is carried out to provide the actual doping program for realizing a desired doping profile and to provide the resultant doping profile from the actual doping characteristics. Monitoring means monitors the vapor growth and feeds back information to computing means. The computing means rearrange the doping program and supply command to means for controlling the vapor growth. It is found it is effective to invert the conductivity type of impurity at least two times particularly in the initial stage of the vapor growth for providing a sharp profile of net impurity distribution.