Company Filing History:
Years Active: 2017-2018
Title: Mary Bigglestone: Innovator in Semiconductor Technology
Introduction
Mary Bigglestone is a prominent inventor based in Newport, GB. She has made significant contributions to the field of semiconductor technology, holding a total of 3 patents. Her innovative work has paved the way for advancements in electronic devices and systems.
Latest Patents
One of her latest patents is titled "Method of forming a semiconductor structure having integrated snubber resistance." This patent discloses a semiconductor structure that includes a source trench in a drift region. The source trench features a dielectric liner and a conductive filler, which are surrounded by the dielectric liner. Additionally, the structure includes a source region in a body region over the drift region. A patterned dielectric cap forms both an insulated and an exposed portion of the conductive filler. This design increases resistance between the source contact layer and the conductive filler, enhancing the overall performance of the semiconductor device.
Career Highlights
Mary Bigglestone has established herself as a key figure in her field through her innovative patents and contributions to semiconductor technology. She works at Infineon Technologies Americas Corp., where she continues to develop cutting-edge solutions that address the challenges in the semiconductor industry.
Collaborations
Throughout her career, Mary has collaborated with notable colleagues, including Kapil Kelkar and Timothy Donald Henson. These partnerships have fostered a creative environment that encourages innovation and the sharing of ideas.
Conclusion
Mary Bigglestone's work in semiconductor technology exemplifies the impact of innovation on modern electronics. Her patents and collaborations highlight her commitment to advancing the field, making her a significant contributor to the industry.