Bailly, France

Martine Rouillon-Martin

This inventor holds 1 USPTO granted patent. Top assignee: Bull S.a.. Active years: 1994.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Martine Rouillon-Martin. Retrieved from https://idiyas.com/inventor/martine-rouillon-martin

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


% Patents Active = 100.0

Average Co-Inventor Count = 3.0

ph-index = 1

Forward Citations = 1(Granted Patents)


Company Filing History:


Years Active: 1994

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1 patent (USPTO):Explore Patents

Title: Martine Rouillon-Martin: Innovator in MOS Transistor Technology

Introduction

Martine Rouillon-Martin is a notable inventor based in Bailly, France. She has made significant contributions to the field of semiconductor technology, particularly in the control of MOS transistors. Her innovative approach has implications for integrated circuits and programmable read-only memory (PROM) devices.

Latest Patents

Martine holds a patent for a method that controls the state of conduction of an MOS transistor. This method utilizes a laser beam to form an electrical connection between the gate and the source or drain region of the transistor. This invention is particularly applicable in the correction, reconfiguration, and redundancy of integrated circuits.

Career Highlights

Martine is associated with Bull S.A., a company known for its advancements in information technology and computing solutions. Her work at Bull S.A. has allowed her to explore and develop innovative technologies that enhance the performance and reliability of electronic devices.

Collaborations

Martine has collaborated with notable colleagues, including Alain Boudou and Marie-Francois Bonnal. These collaborations have fostered a creative environment that encourages the development of groundbreaking technologies.

Conclusion

Martine Rouillon-Martin's contributions to MOS transistor technology exemplify her innovative spirit and dedication to advancing the field of electronics. Her work continues to influence the design and functionality of integrated circuits and PROMs.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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